|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz 1 D Low noise figure D High power gain 1 13 581 94 9280 13 652 13 570 2 3 2 3 S852T Marking: 852 1 = Collector, 2 = Base, 3 = Emitter S852TW Marking: W52 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 -65 to +150 Unit V V V mA mW C C Tamb 125 C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85052 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (7) S852T/S852TW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA VCE = 3 V, IC = 1 mA Symbol Min ICES ICBO IEBO V(BR)CEO 6 VCEsat hFE 40 Typ Max Unit 100 mA 100 nA 1 mA V 0.4 V 150 0.1 90 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Collector-base capacitance Noise figure Test Conditions VCE = 3 V, IC = 1 mA, f = 500 MHz VCE = 2 V, IC = 1.5 mA, f = 500 MHz VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 mA ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 mA ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 mA VCE = 2 V, IC = 0.5 mA, f = 450MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz VCE = 2 V, f = 500 MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Symbol fT fT Ccb Fopt Fopt Fopt Gpe @Fopt Gpe @Fopt Gpe @Fopt IC Re(h11e) Re(h11e) Min Typ Max Unit 4.7 GHz 5.2 GHz 0.25 pF 1.1 dB 1.8 2 11.5 10.5 12 3 50 50 dB dB dB dB dB mA Power g gain Collector current for fT max Real part of input impedance W W www.vishay.de * FaxBack +1-408-970-5600 2 (7) Document Number 85052 Rev. 3, 20-Jan-99 S852T/S852TW Vishay Telefunken Common Emitter S-Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA f/MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 LIN MAG 9.976 0.969 0.955 0.939 0.920 0.901 0.881 0.861 0.838 0.818 0.793 0.772 0.746 0.972 0.898 0.858 0.811 0.762 0.710 0.662 0.617 0.576 0.540 0.502 0.470 0.439 ANG deg -3.8 -7.9 -11.7 -15.5 -18.9 -22.4 -25.8 -28.9 -32.3 -35.4 -38.8 -41.5 -45.1 -7.5 -14.5 -21.0 -27.0 -32.2 -36.8 -40.3 -43.8 -46.9 -50.0 -52.4 -54.8 -57.6 LIN MAG 1.71 1.71 1.70 1.68 1.64 1.62 1.58 1.56 1.53 1.50 1.49 1.46 1.44 4.84 4.69 4.49 4.27 4.01 3.77 3.55 3.33 3.15 2.98 2.82 2.69 2.56 S21 ANG deg 174.9 168.9 163.3 157.7 151.9 147.2 142.2 137.6 133.1 129.4 125.1 121.3 117.2 170.9 161.7 153.1 145.1 137.8 131.3 125.3 120.0 115.1 110.7 106.5 102.8 99.0 LIN MAG 0.015 0.029 0.044 0.058 0.070 0.082 0.093 0.104 0.114 0.121 0.130 0.138 0.148 0.016 0.031 0.045 0.057 0.067 0.077 0.085 0.093 0.099 0.106 0.113 0.118 0.123 S12 ANG deg 86.8 83.4 80.0 76.8 73.6 71.5 69.0 66.7 65.0 63.5 61.8 60.4 58.6 84.8 79.8 75.1 71.5 68.3 65.9 63.6 62.1 61.2 60.3 59.5 59.3 58.7 LIN MAG 0.998 0.993 0.984 0.974 0.959 0.948 0.935 0.922 0.909 0.898 0.884 0.873 0.859 0.990 0.972 0.944 0.913 0.880 0.849 0.820 0.796 0.775 0.756 0.740 0.724 0.710 S22 ANG deg -2.3 -4.7 -6.7 -8.7 -10.6 -12.4 -13.9 -15.5 -17.2 -18.6 -19.7 -21.3 -22.6 -3.9 -7.4 -10.6 -13.1 -15.3 -16.8 -17.8 -18.7 -19.5 -20.3 -20.8 -21.4 -21.7 0.5 2 1.5 Document Number 85052 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (7) S852T/S852TW Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) C cb - Collector Base Capacitance ( pF ) 0 13619 50 P tot - Total Power Dissipation ( mW ) 40 30 20 10 0 25 50 75 100 125 150 Tamb - Ambient Temperature ( C ) 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 VCB - Collector Base Voltage ( V ) 13622 Figure 1. Total Power Dissipation vs. Ambient Temperature 7000 f T - Transition Frequency ( MHz ) f=500MHz 6000 5000 4000 3000 2000 1000 0 0 13620 Figure 3. Collector Base Capacitance vs. Collector Base Voltage 3V 2V VCE=1V 1 2 3 4 5 IC - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current www.vishay.de * FaxBack +1-408-970-5600 4 (7) Document Number 85052 Rev. 3, 20-Jan-99 S852T/S852TW Vishay Telefunken VCE = 2 V, IC = 1.5 mA , Z0 = 50 W S11 j 120 j0.5 j2 500 150 j0.2 j5 30 S12 90 900 1300MHz 0 0.2 0.5 1 2 5 100 -j5 1 -j0.2 13 562 S21 90 120 60 150 2 4 0 0 -j0.2 -150 -30 -120 13 564 -60 -90 13 565 Figure 5. Forward transmission coefficient Document Number 85052 Rev. 3, 20-Jan-99 AAAAAAAAAA AA AAAAAAAAAA AA 100 180 AAAAAAAAAA A AAAAAAAAAA A 1300MHz 900 500 -j0.5 -j -j2 180 100 0.04 0.08 0 -150 -30 -120 13 563 -60 -90 Figure 4. Input reflection coefficient Figure 6. Reverse transmission coefficient S22 j j0.5 500 900 1300MHz 30 j0.2 j5 j2 0.2 0.5 1 2 5 100 1 1300MHz -j5 -j0.5 -j -j2 Figure 7. Output reflection coefficient www.vishay.de * FaxBack +1-408-970-5600 5 (7) S852T/S852TW Vishay Telefunken Dimensions of S852T in mm 95 11346 Dimensions of S852TW in mm 96 12236 www.vishay.de * FaxBack +1-408-970-5600 6 (7) Document Number 85052 Rev. 3, 20-Jan-99 S852T/S852TW Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85052 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 7 (7) |
Price & Availability of S852T |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |